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CGHV40180F
CGHV40180FReference image

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Mfr. #:
CGHV40180F
Batch:
new
Description:
RF JFET TransistorGaN HEMT
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN
Operating Frequency DC to 1000 MHz
Gain 20.3 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 125 V
Vgs-Gate-Source Breakdown Voltage - 10 V, 2 V
Id-Continuous Drain Current 18 A
Output Power 180 W
Maximum Drain/Gate Voltage -
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 150 W
Mounting Style Screw Mount
Package/Case 440223
Package Tray
Other product information

Advantage price,CGHV40180F in stock can be shipped on the same day

In Stock: 31
Qty.Unit PriceExt. Price
1+ $375.3708 $375.3708
10+ $364.0836 $3640.836
25+ $362.5116 $9062.79
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
31
Minimum:
1
MPQ:
1
Multiples:
1
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