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CGH09120F
CGH09120FReference image

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Mfr. #:
CGH09120F
Batch:
new
Description:
RF JFET TransistorGaN HEMT UHF-2.5GHz, 120 Watt
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN
Operating Frequency 910 MHz
Gain 21 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 120 V
Vgs-Gate-Source Breakdown Voltage - 10 V, 2 V
Id-Continuous Drain Current 28 A
Output Power 20 W
Maximum Drain/Gate Voltage 28 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 56 W
Mounting Style Screw Mount
Package/Case
Package Tray
Other product information

Advantage price,CGH09120F in stock can be shipped on the same day

In Stock: 40
Qty.Unit PriceExt. Price
1+ $280.0953 $280.0953
10+ $275.9036 $2759.036
25+ $275.8926 $6897.315
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
40
Minimum:
1
MPQ:
1
Multiples:
1
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