LOGO
Total0Items      Cart Subtotal:$0
LOGO
QPD1008L
QPD1008LReference image

Images are for reference only

Mfr. #:
QPD1008L
Mfr.:
Batch:
new
Description:
RF JFET Transistor DC-3.2GHz 120W 50V SSG 17.5dB GaN
Datasheet:
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 3.2 GHz
Gain 17.5 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 50 V
Vgs-Gate-Source Breakdown Voltage 145 V
Id-Continuous Drain Current 4 A
Output Power 162 W
Maximum Drain/Gate Voltage
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 85 C
Pd-Power Dissipation 127 W
Mounting Style Screw Mount
Package/Case NI-360
Package Tray
Other product information

Advantage price,QPD1008L in stock can be shipped on the same day

In Stock: 68
Qty.Unit PriceExt. Price
1+ $407.5966 $407.5966
25+ $271.7383 $6793.4575
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
68
Minimum:
1
MPQ:
1
Multiples:
1
Copyright © 2020-2024 JiaTengDa (Hong Kong) Limited All rights reserved