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QPD1011SR
QPD1011SRReference image

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Mfr. #:
QPD1011SR
Mfr.:
Batch:
new
Description:
RF JFET Transistor.03-1.2GHz 7W 50V GaN
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 30 MHz to 1200 MHz
Gain 21 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 50 V
Vgs-Gate-Source Breakdown Voltage 145 V
Id-Continuous Drain Current 1.46 A
Output Power 8.7 W
Maximum Drain/Gate Voltage 55 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 85 C
Pd-Power Dissipation 13 W
Mounting Style SMD/SMT
Package/Case SMD-8
Package Reel
Other product information

Advantage price,QPD1011SR in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
100+ $42.3653 $4236.53
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
100
MPQ:
100
Multiples:
1
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