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TGF2979-SM
TGF2979-SMReference image

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Mfr. #:
TGF2979-SM
Mfr.:
Batch:
new
Description:
RF JFET Transistor 8-12GHz 25W GaN PAE 50% Gain 11dB
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency DC to 12 GHz
Gain 11 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 32 V
Vgs-Gate-Source Breakdown Voltage - 2.7 V
Id-Continuous Drain Current 1.8 A
Output Power 22 W
Maximum Drain/Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature 225 C
Pd-Power Dissipation 49 W
Mounting Style SMD/SMT
Package/Case QFN-20
Package Tray
Other product information

Advantage price,TGF2979-SM in stock can be shipped on the same day

In Stock: 50
Qty.Unit PriceExt. Price
1+ $110.8199 $110.8199
25+ $78.3930 $1959.825
100+ $76.7322 $7673.22
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
50
Minimum:
1
MPQ:
1
Multiples:
1
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