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CGHV37400F
CGHV37400FReference image

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Mfr. #:
CGHV37400F
Batch:
new
Description:
RF JFET Transistor 400W, GaN HEMT, 50V, 3.3-3.7GHz, IM FET, Flange
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN
Operating Frequency 3.3 GHz to 3.7 GHz
Gain 14 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 125 V
Vgs-Gate-Source Breakdown Voltage - 10 V, 2 V
Id-Continuous Drain Current 24 A
Output Power 525 W
Maximum Drain/Gate Voltage -
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 125 C
Pd-Power Dissipation -
Mounting Style Flange Mount
Package/Case 440217
Package Tray
Other product information

Advantage price,CGHV37400F in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
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Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
1
Multiples:
1
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