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MRFX1K80GNR5
MRFX1K80GNR5Reference image

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Mfr. #:
MRFX1K80GNR5
Batch:
new
Description:
Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity Dual N-Channel
Technology Si
Id-Continuous Drain Current 43 A
Vds-Drain-Source Breakdown Voltage - 500 mV, 179 V
Rds On-Drain-Source On-Resistance
Operating Frequency 1.8 MHz to 400 MHz
Gain 24.4 dB
Output Power 1.8 kW
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Mounting Style SMD/SMT
Package/Case OM-1230G-4L
Package Reel, Cut Tape
Other product information

Advantage price,MRFX1K80GNR5 in stock can be shipped on the same day

In Stock: 26
Qty.Unit PriceExt. Price
1+ $213.6227 $213.6227
10+ $202.2934 $2022.934
25+ $196.2428 $4906.07
50+ $177.6481 $8882.405
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
26
Minimum:
1
MPQ:
1
Multiples:
1
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