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PD55003S-E
PD55003S-EReference image

Images are for reference only

Mfr. #:
PD55003S-E
Batch:
new
Description:
RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor POWER RF
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity N-Channel
Technology Si
Id-Continuous Drain Current 2.5 A
Vds-Drain-Source Breakdown Voltage 40 V
Rds On-Drain-Source On-Resistance
Operating Frequency 1 GHz
Gain 17 dB
Output Power 3 W
Minimum Operating Temperature - 65 C
Maximum Operating Temperature 150 C
Mounting Style SMD/SMT
Package/Case PowerSO-10RF-Straight-4
Package Tube
Other product information

Advantage price,PD55003S-E in stock can be shipped on the same day

In Stock: 475
Qty.Unit PriceExt. Price
1+ $13.3956 $13.3956
10+ $12.0030 $120.03
25+ $11.3059 $282.6475
100+ $9.9477 $994.77
250+ $9.4767 $2369.175
400+ $7.5898 $3035.92
1200+ $7.5336 $9040.32
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
475
Minimum:
1
MPQ:
1
Multiples:
1
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