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PXAC200902FC-V1-R0
PXAC200902FC-V1-R0Reference image

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Mfr. #:
PXAC200902FC-V1-R0
Batch:
new
Description:
RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RF LDMOS FET
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity Dual N-Channel
Technology Si
Id-Continuous Drain Current
Vds-Drain-Source Breakdown Voltage 65 ​​V
Rds On-Drain-Source On-Resistance 220 mOhms
Operating Frequency 1805 MHz to 2170 MHz
Gain 17.2 dB
Output Power 90 W
Minimum Operating Temperature
Maximum Operating Temperature 225 C
Mounting Style SMD/SMT
Package/Case H-37248-4
Package Reel
Other product information

Advantage price,PXAC200902FC-V1-R0 in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
50+ $62.8765 $3143.825
100+ $60.7261 $6072.61
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
50
MPQ:
50
Multiples:
1
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