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AFT27S006N-1000M

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Mfr. #:
AFT27S006N-1000M
Batch:
new
Description:
RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor AFT27S006N-1000M
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor polarity
Technology Si
Id-Continuous drain current
Vds-Drain-source breakdown voltage
Rds On-Drain-source on-resistance
Operating frequency
Gain
Output power
Minimum operating temperature
Maximum operating temperature
Mounting style
Package/enclosure
Package
Other product information

Advantage price,AFT27S006N-1000M in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
1+ $682.4460 $682.446
10+ $663.8637 $6638.637
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
1
Multiples:
1
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